Interface Effects on Drain Current Instability in GaAs MESFETs with Buffer Layer : B-2: GaAs FET/LED AND DETECTOR

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1980-04-30

著者

• Itoh Tomohiro

  Department Of Electronic Engineering University Of Tokyo

• Yanai Hisayoshi

  Department Of Electronic Engineering University Of Tokyo

• Yanai Hisayoshi

  Department Of Electronic Engineering Faculty Of Engineering University Of Tokyo

• Itoh Tomohiro

  Department Of Bioactive Molecutes Pharmacognosy Gifu Pharmaceutical University

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• Interface Effects on Drain Current Instability in GaAs MESFETs with Buffer Layer : B-2: GaAs FET/LED AND DETECTOR
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