Gain Saturation of a 1.3 μm InGaAsP Traveling-Wave Amplifier in Picosecond Pulse Amplification
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概要
- 論文の詳細を見る
Saturation energy of a 1.3 μm semiconductor laser traveling wave amplifier is found to depend both on the input pulsewidth and on the input pulse energy at picosecond regime. Shorter pulses are shown to have less saturation energy than longer pulses, which suggests the nonlinear gain give influence to the response of the amplifier. The simulated pulsewidth dependent energy gain by a set of traveling wave rate equations incorporating the nonlinear gain shows fairly good agreement with the measurements.
- 社団法人応用物理学会の論文
- 1992-04-15
著者
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Liu H‐f
Univ. Tokyo Tokyo Jpn
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Liu Hai-feng
Department Of Electronic Engineering University Of Tokyo
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Tohyama Masaki
Department Of Electronic Engineering University Of Tokyo
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Kawahara Masato
Research Laboratory Oki Electric Industry Co. Ltd.
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Kamiya Takeshi
Department Of Applied Physics Faculty Of Engineering University Of Tokyo:(present Address) Departmen
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Liu Hai-feng
Department Of Electronic Engineering University Of Melbourne
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