Liquid Phase Epitaxial Growth of n-GaAs on i-GaAs
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1974-02-05
著者
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Aoki Tatsuo
Musashino Electrical Communication Laboratory
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Nanishi Yasushi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Nanishi Yasushi
Musashino Electrical Communication Laboratory
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SATO Yasuo
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Sato Yasuo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
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- The Influence of Dislocation Density on the Uniformity of Electrical Properties of Si Implanted, Semi-Insulating LEC-GaAs
- Inhomogeneous GaAs FET Threshold Voltages Related to Dislocation Distribution
- Characterization of Semi-Insulating GaAs Substrates for GaAs ICs : C-2: III-V CRYSTALS/JOSEPHSON JUNCTION
- Dependence of the Properties of Epitaxial Gallium Arsenide on the Temperature of AsCl_3
- High Purity Epitaxial GaAs
- Liquid Phase Epitaxial Growth of n-GaAs on i-GaAs
- Correlation between Dislocation Distribution and FET Performances Observed in Low Cr Doped LEC GaAs
- Continuous Growth of LPE Double Layers for GaAs FET
- Liquid Phase Epitaxial Growth of High Purity GaAs by Sliding Boat Method
- Surface Contamination of GaAs during Photo-Etching
- Formation of the Conductive Layer near the Surface of Semi-Insulating GaAs Covered with Oxide Film