Dependence of the Properties of Epitaxial Gallium Arsenide on the Temperature of AsCl_3

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1972-12-05

著者

• Aoki Tatsuo

  Musashino Electrical Communication Laboratory

• YAMAGUCHI Masao

  Musashino Electrical Communication Laboratory

• Aoki Tatsuo

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Yamaguchi Masao

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• A Method for Determining a GaAs Epitaxial Layer Impurity Profile
• Impurity Profile Determination in Epitaxial GaAs Crystals on High-Resistivity Substrates
• Differential Capacitance of GaAs-Electrolyte Contact
• Dependence of the Properties of Epitaxial Gallium Arsenide on the Temperature of AsCl_3
• High Purity Epitaxial GaAs
• Liquid Phase Epitaxial Growth of n-GaAs on i-GaAs
• In_xGa_As Injection Lasers

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