High Purity Epitaxial GaAs

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概要

• 論文の詳細を見る

• Using the AsCl_3-Ga-H_2 vapor phase epitaxial system, high purity GaAs layers with liquid nitrogen mobilities in the range of 1.8 to 2.1×10^5 cm^2/V.s and carrier concentrations in the range of 2.0 to 5.3×10^<13>/cm^3 are obtained with good reproducibility. Mobilities tend to decrease with decreasing layer thickness. AsCl_3 mole flux versus the log of carrier concentration at 77K shows a linear relationship. Details of the growth apparatus and the growth procedures are presented.

• 社団法人応用物理学会の論文
• 1975-09-05

著者

• Aoki Tatsuo

  Musashino Electrical Communication Laboratory

関連論文

• A Method for Determining a GaAs Epitaxial Layer Impurity Profile
• Impurity Profile Determination in Epitaxial GaAs Crystals on High-Resistivity Substrates
• Differential Capacitance of GaAs-Electrolyte Contact
• Dependence of the Properties of Epitaxial Gallium Arsenide on the Temperature of AsCl_3
• High Purity Epitaxial GaAs
• Liquid Phase Epitaxial Growth of n-GaAs on i-GaAs

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