A Method for Determining a GaAs Epitaxial Layer Impurity Profile
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1975-07-05
著者
-
Aoki Tatsuo
Musashino Electrical Communication Laboratory
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YAMASHITA Akiyasu
Musashino Electrical Communication Laboratory
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YAMAGUCHI Masao
Musashino Electrical Communication Laboratory
関連論文
- A Method for Determining a GaAs Epitaxial Layer Impurity Profile
- Impurity Profile Determination in Epitaxial GaAs Crystals on High-Resistivity Substrates
- Differential Capacitance of GaAs-Electrolyte Contact
- Pre-Breakdown Phenomena of Au-GaAs Schottky Diode
- Dependence of the Properties of Epitaxial Gallium Arsenide on the Temperature of AsCl_3
- High Purity Epitaxial GaAs
- Liquid Phase Epitaxial Growth of n-GaAs on i-GaAs
- In_xGa_As Injection Lasers