Formation of the Conductive Layer near the Surface of Semi-Insulating GaAs Covered with Oxide Film

スポンサーリンク

概要

• 論文の詳細を見る

• Thin conductive layer is formed near the surface of i-GaAs doped with Cr, when the surface of i-GaAs is covered with SiO_2 or phospho-silicate glass (PSG) grown by means of thermal decomposition of alchoxyl silicate and phosphate. The thickness of the layer increases with increasing duration and temperature of heat treatment. This layer shows n-type conduction, and the concentration and mobility of electron in this layer are 1∿2×10^<17> cm^<-3> and about 2500 cm^2/V・sec, respectively. It is concluded that the cause of the conductive layer formation is a decrease of the concentration of Cr which compensates undesirable donors in i-GaAs, as a result of the diffusion of Cr into the oxide film. The formation of such conductive layers can be prevented by covering i-GaAs with sputtered SiO_2 from fused quartz or Si_3N_4. The activation energy of diffusion coefficient of Cr in i-GaAs is estimated to be 3.6 eV.

• 社団法人応用物理学会の論文
• 1973-02-05

著者

• Sato Yasuo

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Liquid Phase Epitaxial Growth of n-GaAs on i-GaAs
• Surface Contamination of GaAs during Photo-Etching
• Formation of the Conductive Layer near the Surface of Semi-Insulating GaAs Covered with Oxide Film

スポンサーリンク