Continuous Growth of LPE Double Layers for GaAs FET

概要

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Based on the results of high purity LPE growth experiment, the continuous growth procedure for obtaining GaAs FET double layers (buffer and active layers) is investigated by the sliding boat method. Tin is selected as a dopant for the n-type active layer and its density is shown to be controlled to within ±5%. The continuous growth condition was determined for the double layer of the high purity buffer and n-type active layers, after the high purity growth and Sn doping experiments at various growth temperatures. The high purity buffer layer and submicron active layer with a steep carrier concentration profile are obtained. Anodic oxidation was emplyed for the control of the active layer thickness to (0.2±0.01)μm from the original(0.7±0.15)μm. 1μm-gate FET's, fabricated in the grown layer, showed no indication of deep traps. Its maximum oscillation frequency and NF at 10.4 GHz were 70GHz and 2.4dB, respectively.
社団法人応用物理学会の論文
1978-06-05