Liquid Phase Epitaxial Growth of High Purity GaAs by Sliding Boat Method

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概要

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• High purity LPE layers are grown by the sliding boat method, varying the experimental conditions, such as the pre-heat temperature, growth temperature and the type of carrier gas. Dominant residual impurity and its purification mechanism are systematically investigated. The results of the present work (residual net donor concentration>1×10^<14> cm^<-3>) can be satisfactorily explained by assuming oxygen as a dominant residual impurity which behaves as a shallow donor. The purification mechanisms are explained by both deoxidization of Ga_2O_3 by the hydrogen gas and the desorption of H_2O and O_2 adsorbed by the porous graphite. It is possible to grow high purity undoped layers reproducibly with carrier concentrations in the (1〜3)×10^<14> cm^<-3> range, taking special care not to introduce oxygen in the grown layers.

• 社団法人応用物理学会の論文
• 1978-07-05

著者

• Nanishi Yasushi

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Nanishi Yasushi

  Musashino Electrical Communication Laboratory

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• Continuous Growth of LPE Double Layers for GaAs FET
• Liquid Phase Epitaxial Growth of High Purity GaAs by Sliding Boat Method

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