Characterization of Semi-Insulating GaAs Substrates for GaAs ICs : C-2: III-V CRYSTALS/JOSEPHSON JUNCTION
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概要
- 論文の詳細を見る
- 1983-02-28
著者
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Nanishi Yasushi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Nanishi Yasushi
Musashino Electrical Communication Laboratory
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MIYAZAWA Shintaro
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Miyazawa Shintaro
Musashino Electrical Communication Laboratory
関連論文
- Leakage Current I_L Variation Correlated with Dislocation Density in Undoped, Semi-Insulating LEC-GaAs
- The Influence of Dislocation Density on the Uniformity of Electrical Properties of Si Implanted, Semi-Insulating LEC-GaAs
- Inhomogeneous GaAs FET Threshold Voltages Related to Dislocation Distribution
- Characterization of Semi-Insulating GaAs Substrates for GaAs ICs : C-2: III-V CRYSTALS/JOSEPHSON JUNCTION
- Liquid Phase Epitaxial Growth of n-GaAs on i-GaAs
- Correlation between Dislocation Distribution and FET Performances Observed in Low Cr Doped LEC GaAs
- Liquid-Phase Epitaxy of Ga_In_yAs_xSb_ Quaterary Alloys on GaSb
- Continuous Growth of LPE Double Layers for GaAs FET
- Liquid Phase Epitaxial Growth of High Purity GaAs by Sliding Boat Method