Inhomogeneous GaAs FET Threshold Voltages Related to Dislocation Distribution
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1982-06-20
著者
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ISHIDA Satoru
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Nanishi Yasushi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Nanishi Yasushi
Musashino Electrical Communication Laboratory
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Yamazaki Hajime
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corrporation
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Yamazaki Hajime
Musashino Electrical Communication Laboratory
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MIYAZAWA Shintaro
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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HONDA Takashi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corrporation
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Ishida Satoru
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Honda Takashi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corrporation
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Miyazawa Shintaro
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Miyazawa Shintaro
Musashino Electrical Communication Laboratory
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- Inhomogeneous GaAs FET Threshold Voltages Related to Dislocation Distribution
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- Characterization of Semi-Insulating GaAs Substrates for GaAs ICs : C-2: III-V CRYSTALS/JOSEPHSON JUNCTION
- Liquid Phase Epitaxial Growth of n-GaAs on i-GaAs
- Correlation between Dislocation Distribution and FET Performances Observed in Low Cr Doped LEC GaAs
- Liquid-Phase Epitaxy of Ga_In_yAs_xSb_ Quaterary Alloys on GaSb
- Continuous Growth of LPE Double Layers for GaAs FET
- Liquid Phase Epitaxial Growth of High Purity GaAs by Sliding Boat Method