Annealing Characteristics of Arsenic-Implanted Silicon
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1977-01-05
著者
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Nojima Shunji
Musashino Electrical Communication Laboratory
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FUJIMOTO Masatomo
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Yamazaki Hajime
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corrporation
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Yamazaki Hajime
Musashino Electrical Communication Laboratory
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HARADA Hiroyuki
Musashino Electrical Communication Laboratory
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Fujimoto Masatomo
Musashino Electrical Communication Laboratory
関連論文
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- Leakage Current I_L Variation Correlated with Dislocation Density in Undoped, Semi-Insulating LEC-GaAs
- Annealing Characteristics of Arsenic-Implanted Silicon
- The Influence of Dislocation Density on the Uniformity of Electrical Properties of Si Implanted, Semi-Insulating LEC-GaAs
- Inhomogeneous GaAs FET Threshold Voltages Related to Dislocation Distribution
- Tin Diffusion into GaAs from Doped SiO_2 Films
- Vapour Growth of GaAs by H_2 Introduction into an Inert Carrier Gas Stream
- Annealing Characteristics of Be Ion Implanted GaAs
- Property of Disordered GaAs by Ion Implantation
- Anomaly of Electrical Activation of As Atoms Implanted in Si by Additional Ne Irradiation
- Physical Property of Disordered-GaAs Produced by Ion Implantation
- Carrier Reduction in n-GaAs by Cr Ion Implantation
- New Methods of Vapour Phase Epitaxial Growth of GaAs
- Direct Observation of the Crust Formation in the Ga-AsCl_3-H_2 and Ga-PCl_3-H_2 Systems
- Stopping Properties of Molybdenum Films against Arsenic Ion Implantation