Physical Property of Disordered-GaAs Produced by Ion Implantation

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概要

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• The properties of disordered-GaAs produced by ion implantation and its annealing behaviors are investigated for ion species of H, Be, P, and As, from the viewpoints of both the electrical property and the physical structure of the disordered layer. From the study of the electron diffraction for implanted layers and of the conductivity due to defects as a function of dose, depth, measuring temperature, and annealing temperature, the following two facts are clarified: first, the conductivity due to defects can be a good measure for the degree of disorder in GaAs produced by ion implantation, when it is less than 〜1Ω^1 cm^1. Second, the localized states originating from defects are distributed with the same density in the high dose implanted layer, in spite of the degree of disorder in the physical structure.

• 社団法人応用物理学会の論文
• 1979-06-05

著者

• Nojima Shunji

  Musashino Electrical Communication Laboratory

関連論文

• Annealing Characteristics of Arsenic-Implanted Silicon
• Annealing Characteristics of Be Ion Implanted GaAs
• Property of Disordered GaAs by Ion Implantation
• Anomaly of Electrical Activation of As Atoms Implanted in Si by Additional Ne Irradiation
• Physical Property of Disordered-GaAs Produced by Ion Implantation
• Carrier Reduction in n-GaAs by Cr Ion Implantation

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