Annealing Characteristics of Be Ion Implanted GaAs
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概要
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350 keV Be ion implantation into semi-insulating GaAs was accomplished at R.T. for doses ranging from 1×10^13 to 1×10^16 cm^<-2>. To characterize the produced damage, defect conductivity profiling and electron diffraction were carried out for samples annealed below 450℃. Implanted layers were found to be extremely less damaged, even at high doses. To determine the optimum conditions for low resistive p-type layer formation, isochronal annealing characteristics were studied above 700℃. Mobility obtained was equivalent to bulk mobility. At higher doses, annealing, which caused a decrease in activity in GaAs. As a result, low resistive p-type layers were found to be reproducibly formed by relatively low temperature annealing (〜700℃) for high dose implanted samples, giving the lowest sheet resistance of 14Ω/□ by single energy implantation.
- 社団法人応用物理学会の論文
- 1978-10-05
著者
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Nojima Shunji
Musashino Electrical Communication Laboratory
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KAWASAKI Yasuhiro
Musashino Electrical Communication Laboratory
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