Carrier Reduction in n-GaAs by Cr Ion Implantation
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概要
- 論文の詳細を見る
Carrier concentration profiles in 300 keV Cr ion implanted n-GaAs (carrier concentrations 〜7×10^<16> cm^<-3>) with doses of 8×10^<11>〜8×10^<13>cm^<-2> are studied by differential capacitance voltage measurements for annealing temperatures of up to 800℃. The most pronounced carrier reduction is observed at 750℃. The diffusion coefficient of Cr atoms in GaAs at 750℃ is evaluated to be 6.2×10^<-13> cm^2/s by fitting a theoretical carrier concentration profile to the measured curves. From the annealing behavior of the zero bias depletion layer width in the Schottky barrier diode, the implanted Cr atoms are found to form more effective compensation centers in n-GaAs after 750℃ annealing than other possible implanted impurities.
- 社団法人応用物理学会の論文
- 1980-12-05
著者
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Nojima Shunji
Musashino Electrical Communication Laboratory
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Nojima Shunji
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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KAWASAKI Yasuhiro
Musashino Electrical Communication Laboratory
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Kawasaki Yasuhiro
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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- Carrier Reduction in n-GaAs by Cr Ion Implantation