Stopping Properties of Molybdenum Films against Arsenic Ion Implantation

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概要

• 論文の詳細を見る

• The stopping properties of Mo and Mo_2N films against As ions have been investigated using SIMS. The implantation of arsenic ions in Mo gives concentration profiles broader than the LSS theoretical predictions, with a tail showing penetration into the region beyond the peak concentration. The main cause of this is thought to be channeling occurring in some columnar grains with the <110> direction aligned with the tilted incident beam. The channeling effect depends on the ion dose and the preimplantation annealing temperature. The profiles in Mo_2N also have an anomalous tail generated by channeling. The profile broadening in Mo_2N is less than that in Mo.

• 社団法人応用物理学会の論文
• 1982-02-05

著者

• HARADA Hiroyuki

  Musashino Electrical Communication Laboratory

• Fujinaga Kiyohisa

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Harada Hiroyuki

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Annealing Characteristics of Arsenic-Implanted Silicon
• Stopping Properties of Molybdenum Films against Arsenic Ion Implantation

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