New Methods of Vapour Phase Epitaxial Growth of GaAs
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概要
- 論文の詳細を見る
New vapour growth methods using the Ga-AsCl_3-H_2 and GaAs-AsCl_3-H_2 systems are proposed. In these methods, the apparatus is basically the same as the conventional Ga-AsCl_3-H_2 system, but the source and the substrate are kept at the same temperature. The growth in the Ga-AsCl_3-H_2 system is based on the reaction between gallium monochloride and arsenic that is being passed over metallic gallium at low temperatures (<800℃). The influences of the temperature, the hydrogen flow rate, and the gas composition on the growth rate are studied. The growth in the GaAs-AsCl_3-H_2 system is based on the reaction of GaAs with AsCl_3 at low temperatures (<700℃). The transport rate of the source GaAs and the growth rate of epitaxial layers are discussed as functions of the reaction temperature, the hydrogen flow rate, the gas composition and the position of substrate. The reaction mechanisms for the two systems are also discussed.
- 社団法人応用物理学会の論文
- 1976-01-05
著者
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Seki Hisashi
Faculty Of Technology Tokyo University Of Agriculture And Technology
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Fujimoto Masatomo
Musashino Electrical Communication Laboratory
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KOOKITU Akinori
Faculty of Technology, Tokyo University of Agriculture and Technology
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OHTA Katuro
Faculty of Technology, Tokyo University of Agriculture and Technology
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Ohta Katuro
Faculty Of Technology Tokyo University Of Agriculture And Technology
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Kookitu Akinori
Faculty Of Technology Tokyo University Of Agriculture And Technology
関連論文
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