Thermodynamic Study of the Transport and Epitaxial Growth of GaAs in an Open Tube
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概要
- 論文の詳細を見る
A theory based on a thermodynamic analysis is developed and compared with experimental results obtained for transport and epitaxial growth of GaAs in GaAs-AsC1_3-H_2 system. The transport rate of source GaAs and the growth rate of epitaxial layers are discussed as a function of the hydrogen flow rate, the source and substrate temperatures, the mole ratio of Cl_2/H_2, the reaction time and the substrate orientation. A reasonable agreement is found between the theory and experimental results except the effect of the substrate orientation on growth rate.
- 社団法人応用物理学会の論文
- 1968-11-05
著者
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Seki Hisashi
Faculty Of Technology Tokyo University Of Agriculture And Technology
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MORIYAMA Kooichi
Faculty of Technology, Tokyo University of Agriculture and Technology
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ASAKAWA Izumi
Faculty of Technology, Tokyo University of Agriculture and Technology
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HORIE Souji
Faculty of Technology, Tokyo University of Agriculture and Technology
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Horie Souji
Faculty Of Technology Tokyo University Of Agriculture And Technology
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Asakawa Izumi
Faculty Of Technology Tokyo University Of Agriculture And Technology
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Moriyama Kooichi
Faculty Of Technology Tokyo University Of Agriculture And Technology
関連論文
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- Vapour Growth of GaAs by H_2 Introduction into an Inert Carrier Gas Stream
- The Electrical Properties of VPE GaAs Grown by the Single Flat Temperature Zone Method
- Thermodynamic Study of the Growth Rate of Epitaxial GaAs by GaAs/AsCl_3/H_2 System
- Thermodynamic Calculation for the Quaternary Alloy Composition of Vapor-Grown In_Ga_xAs_yP_
- Thermodynamic Calculation for the Vapor Growth of In_xGa_As: The In-Ga-As-Cl-H System
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- New Methods of Vapour Phase Epitaxial Growth of GaAs
- Direct Observation of the Crust Formation in the Ga-AsCl_3-H_2 and Ga-PCl_3-H_2 Systems
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- A New Vapor Growth Method for GaP Using a Single Flat Temperature Zone
- A Thermodynamic Study on the Composition of GaAs_P_x Deposited in Vapor Phase
- Vapor Transport of Gallium in the Ga-PCl_3-H_2 System