Vapor Transport of Gallium in the Ga-PCl_3-H_2 System
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概要
- 論文の詳細を見る
A theoretical consideration based on thermodynamics has been developed and the result is compared with experimental results obtained for the transport of gallium. The transport rate of gallium is discussed as a function of the reaction temperature, the hydrogen flow rate and the mole ratio of Cl/H. A good agreement is found between the theory and experimental results. It is also shown that the experimental data of Luther and Roccasecca are predicted by the theory and that the theoretical results give an upper limit of the transport rate of the gallium.
- 社団法人応用物理学会の論文
- 1971-01-05
著者
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Seki Hisashi
Faculty Of Technology Tokyo University Of Agriculture And Technology
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Eguchi Hiroshi
Faculty Of Technology Tokyo University Of Agriculture And Technology
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GEJYO Tetsuo
Central Research Laboratory, Hitachi, Ltd.
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Gejyo Tetsuo
Central Research Laboratory Hitachi Ltd.
関連論文
- A Note on the Composition of GaAs_P_x Grown in the GaAs-AsCl_3-PCl_3-H_2 System
- Vapor Transport Thermodynamics of GaP-Cl_2-H_2 System in an Open Tube
- Thermodynamic Analysis of the Vapour Growth of GaAs: The Inert Gas-Hydrogen Mixed Carrier System
- Vapour Growth of GaAs by H_2 Introduction into an Inert Carrier Gas Stream
- The Electrical Properties of VPE GaAs Grown by the Single Flat Temperature Zone Method
- Thermodynamic Study of the Growth Rate of Epitaxial GaAs by GaAs/AsCl_3/H_2 System
- Thermodynamic Calculation for the Quaternary Alloy Composition of Vapor-Grown In_Ga_xAs_yP_
- Thermodynamic Calculation for the Vapor Growth of In_xGa_As: The In-Ga-As-Cl-H System
- Thermodynamic Study of the Transport and Epitaxial Growth of GaAs in an Open Tube
- New Methods of Vapour Phase Epitaxial Growth of GaAs
- Direct Observation of the Crust Formation in the Ga-AsCl_3-H_2 and Ga-PCl_3-H_2 Systems
- Vapor Deposition of Silicon Nitride on GaAs by SiCl_4-NH_3-N_2 System
- The Residual Doping Level in VPE GaAs Grown by the Single Flat Temperature Zone Method
- Epitaxial Growth of InP on GaAs in an Open Flow System
- A New Vapor Growth Method for GaP Using a Single Flat Temperature Zone
- A Thermodynamic Study on the Composition of GaAs_P_x Deposited in Vapor Phase
- Vapor Transport of Gallium in the Ga-PCl_3-H_2 System