The Residual Doping Level in VPE GaAs Grown by the Single Flat Temperature Zone Method

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1977-05-05

著者

• Koukitu Akinori

  Faculty Of Technology Tokyo University Of Agriculture And Technology

• Seki Hisashi

  Faculty Of Technology Tokyo University Of Agriculture And Technology

• SEKI Hiroshi

  Faculty of Technology, Tokyo University of Agriculture and Technology

• FUJIMOT0 Masatomo

  Musashino Electrical Communication Laboratory,NTT

• Seki Hiroshi

  Faculty Of Technology Tokyo University Of Agriculture And Technology

• Fujimot0 Masatomo

  Musashino Electrical Communication Laboratory Ntt

関連論文

• A Note on the Composition of GaAs_P_x Grown in the GaAs-AsCl_3-PCl_3-H_2 System
• Vapor Transport Thermodynamics of GaP-Cl_2-H_2 System in an Open Tube
• Thermodynamic Analysis of the Vapour Growth of GaAs: The Inert Gas-Hydrogen Mixed Carrier System
• Vapour Growth of GaAs by H_2 Introduction into an Inert Carrier Gas Stream
• The Electrical Properties of VPE GaAs Grown by the Single Flat Temperature Zone Method
• Thermodynamic Study of the Growth Rate of Epitaxial GaAs by GaAs/AsCl_3/H_2 System
• Thermodynamic Calculation for the Quaternary Alloy Composition of Vapor-Grown In_Ga_xAs_yP_
• Thermodynamic Calculation for the Vapor Growth of In_xGa_As: The In-Ga-As-Cl-H System
• Thermodynamic Study of the Transport and Epitaxial Growth of GaAs in an Open Tube
• New Methods of Vapour Phase Epitaxial Growth of GaAs
• Direct Observation of the Crust Formation in the Ga-AsCl_3-H_2 and Ga-PCl_3-H_2 Systems
• Vapor Deposition of Silicon Nitride on GaAs by SiCl_4-NH_3-N_2 System
• The Residual Doping Level in VPE GaAs Grown by the Single Flat Temperature Zone Method
• Epitaxial Growth of InP on GaAs in an Open Flow System
• A New Vapor Growth Method for GaP Using a Single Flat Temperature Zone
• A Thermodynamic Study on the Composition of GaAs_P_x Deposited in Vapor Phase
• Vapor Transport of Gallium in the Ga-PCl_3-H_2 System

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