A New Vapor Growth Method for GaP Using a Single Flat Temperature Zone
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1973-07-05
著者
-
Seki Hisashi
Faculty Of Technology Tokyo University Of Agriculture And Technology
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Takizawa Yukio
Faculty Of Technology Tokyo University Of Agriculture And Technology
関連論文
- A Note on the Composition of GaAs_P_x Grown in the GaAs-AsCl_3-PCl_3-H_2 System
- Vapor Transport Thermodynamics of GaP-Cl_2-H_2 System in an Open Tube
- Thermodynamic Analysis of the Vapour Growth of GaAs: The Inert Gas-Hydrogen Mixed Carrier System
- Vapour Growth of GaAs by H_2 Introduction into an Inert Carrier Gas Stream
- The Electrical Properties of VPE GaAs Grown by the Single Flat Temperature Zone Method
- Thermodynamic Study of the Growth Rate of Epitaxial GaAs by GaAs/AsCl_3/H_2 System
- Thermodynamic Calculation for the Quaternary Alloy Composition of Vapor-Grown In_Ga_xAs_yP_
- Thermodynamic Calculation for the Vapor Growth of In_xGa_As: The In-Ga-As-Cl-H System
- Thermodynamic Study of the Transport and Epitaxial Growth of GaAs in an Open Tube
- New Methods of Vapour Phase Epitaxial Growth of GaAs
- Direct Observation of the Crust Formation in the Ga-AsCl_3-H_2 and Ga-PCl_3-H_2 Systems
- Vapor Deposition of Silicon Nitride on GaAs by SiCl_4-NH_3-N_2 System
- The Residual Doping Level in VPE GaAs Grown by the Single Flat Temperature Zone Method
- Epitaxial Growth of InP on GaAs in an Open Flow System
- A New Vapor Growth Method for GaP Using a Single Flat Temperature Zone
- A Thermodynamic Study on the Composition of GaAs_P_x Deposited in Vapor Phase
- Vapor Transport of Gallium in the Ga-PCl_3-H_2 System