Anomaly of Electrical Activation of As Atoms Implanted in Si by Additional Ne Irradiation

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1978-08-05

著者

• Nojima Shunji

  Musashino Electrical Communication Laboratory

関連論文

• Annealing Characteristics of Arsenic-Implanted Silicon
• Annealing Characteristics of Be Ion Implanted GaAs
• Property of Disordered GaAs by Ion Implantation
• Anomaly of Electrical Activation of As Atoms Implanted in Si by Additional Ne Irradiation
• Physical Property of Disordered-GaAs Produced by Ion Implantation
• Carrier Reduction in n-GaAs by Cr Ion Implantation

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