Leakage Current I_L Variation Correlated with Dislocation Density in Undoped, Semi-Insulating LEC-GaAs
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1982-09-20
著者
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MIZUTANI Takashi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Yamazaki Hajime
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corrporation
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Yamazaki Hajime
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Yamazaki Hajime
Musashino Electrical Communication Laboratory
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MIYAZAWA Shintaro
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Miyazawa Shintaro
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Miyazawa Shintaro
Musashino Electrical Communication Laboratory
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Mizutani Takashi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
- High Speed Enhancement-Mode GaAs MESFET Integrated Circuits : B-1: GaAs IC
- Leakage Current I_L Variation Correlated with Dislocation Density in Undoped, Semi-Insulating LEC-GaAs
- Annealing Characteristics of Arsenic-Implanted Silicon
- The Influence of Dislocation Density on the Uniformity of Electrical Properties of Si Implanted, Semi-Insulating LEC-GaAs
- Inhomogeneous GaAs FET Threshold Voltages Related to Dislocation Distribution
- Tin Diffusion into GaAs from Doped SiO_2 Films
- Degradation-Free P-CVD SiN Deposition on GaAs FETs
- Characterization of Semi-Insulating GaAs Substrates for GaAs ICs : C-2: III-V CRYSTALS/JOSEPHSON JUNCTION
- Annealing Behavior of Damage Introduced in GaAs by Reactive Ion Beam Etching
- Correlation between Dislocation Distribution and FET Performances Observed in Low Cr Doped LEC GaAs
- Liquid-Phase Epitaxy of Ga_In_yAs_xSb_ Quaterary Alloys on GaSb
- Photo-Induced Current Spectroscopy for Normally-Off GaAs MESFETs