Annealing Behavior of Damage Introduced in GaAs by Reactive Ion Beam Etching
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1982-09-20
著者
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Yamane Yasuro
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation:(pre
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Yamane Yasuro
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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MIZUTANI Takashi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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YAMASAKI Kimiyoshi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Yamasaki Kimiyoshi
Musashino Electrical Communication Laboratory
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Yamasaki Kimiyoshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Mizutani Takashi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
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- Leakage Current I_L Variation Correlated with Dislocation Density in Undoped, Semi-Insulating LEC-GaAs
- Degradation-Free P-CVD SiN Deposition on GaAs FETs
- Annealing Behavior of Damage Introduced in GaAs by Reactive Ion Beam Etching
- N^+ Self-Aligned MESFET for GaAs LSIs : B-6: III-V DEVICE TECHNOLOGY
- Photo-Induced Current Spectroscopy for Normally-Off GaAs MESFETs