Degradation-Free P-CVD SiN Deposition on GaAs FETs
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概要
- 論文の詳細を見る
- 1983-06-20
著者
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Yamane Yasuro
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation:(pre
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Yamane Yasuro
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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MIZUTANI Takashi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Ishii Yasunobu
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation:(pre
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Mizutani Takashi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
- High Speed Enhancement-Mode GaAs MESFET Integrated Circuits : B-1: GaAs IC
- Leakage Current I_L Variation Correlated with Dislocation Density in Undoped, Semi-Insulating LEC-GaAs
- The Influence of Dislocation Density on the Uniformity of Electrical Properties of Si Implanted, Semi-Insulating LEC-GaAs
- Degradation-Free P-CVD SiN Deposition on GaAs FETs
- Annealing Behavior of Damage Introduced in GaAs by Reactive Ion Beam Etching
- Photo-Induced Current Spectroscopy for Normally-Off GaAs MESFETs