Photo-Induced Current Spectroscopy for Normally-Off GaAs MESFETs

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概要

• 論文の詳細を見る

• Deep levels in a very thin active layer of less than 0.1 μm, such as used for normally-off GaAs MESFETs, were succesfully detected by monitoring photo-induced drain current variation as a function of light wavelength. Four current peaks were observed at 2330, 1750, 1410 and 910 nm wavelengths. Illumination-induced change in the surface depletion layer width is supposed to play an important role in the current variation.

• 社団法人応用物理学会の論文
• 1982-08-20

著者

• Mizutani Takashi

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

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• Annealing Behavior of Damage Introduced in GaAs by Reactive Ion Beam Etching
• Photo-Induced Current Spectroscopy for Normally-Off GaAs MESFETs

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