High Speed Enhancement-Mode GaAs MESFET Integrated Circuits : B-1: GaAs IC
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1980-04-30
著者
-
Komatsu Kazuhiko
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
-
MIZUTANI Takashi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
-
KATO Naoki
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
-
ISHIDA Satoru
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
-
ASAI Kazuyoshi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
-
SAKAKIBARA Yutaka
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
-
OHMORI Masamichi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
-
Asai Kazuyoshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
-
Asai Kazuyoshi
Musashino Electrical Communication Laboratory
-
Ohmori Masamichi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
-
Ishida Satoru
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
-
Sakakibara Yutaka
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
-
Mizutani Takashi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
-
Kato Naoki
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
- High Speed Enhancement-Mode GaAs MESFET Integrated Circuits : B-1: GaAs IC
- Leakage Current I_L Variation Correlated with Dislocation Density in Undoped, Semi-Insulating LEC-GaAs
- Inhomogeneous GaAs FET Threshold Voltages Related to Dislocation Distribution
- Degradation-Free P-CVD SiN Deposition on GaAs FETs
- Annealing Behavior of Damage Introduced in GaAs by Reactive Ion Beam Etching
- Correlation between Dislocation Distribution and FET Performances Observed in Low Cr Doped LEC GaAs
- N^+ Self-Aligned MESFET for GaAs LSIs : B-6: III-V DEVICE TECHNOLOGY
- MOS LSI Fabrication Process using Direct Electron Beam Writing : A-6: ELECTRON BEAM TECHNOLOGY
- Photo-Induced Current Spectroscopy for Normally-Off GaAs MESFETs