N^+ Self-Aligned MESFET for GaAs LSIs : B-6: III-V DEVICE TECHNOLOGY

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1983-02-28

著者

• Asai Kazuyoshi

  Musashino Electrical Communication Laboratory

• YAMASAKI Kimiyoshi

  Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• KURUMADA Katsuhiko

  Musashino Electrical Communication Laboratory

• Yamasaki Kimiyoshi

  Musashino Electrical Communication Laboratory

関連論文

• High Speed Enhancement-Mode GaAs MESFET Integrated Circuits : B-1: GaAs IC
• Annealing Behavior of Damage Introduced in GaAs by Reactive Ion Beam Etching
• N^+ Self-Aligned MESFET for GaAs LSIs : B-6: III-V DEVICE TECHNOLOGY
• Field Profiles in Tapered Planar Gunn Devices

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