Correlation between Dislocation Distribution and FET Performances Observed in Low Cr Doped LEC GaAs
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概要
- 論文の詳細を見る
Definitive correlation between dislocation distribution and distribution of FET performances in low Cr (0.155〜0.180 wt ppm) doped LEC GaAs was obtained by simultaneous characterization of (100) and (010) wafers. Drain-source currents (I_<ds>) in the high EPD area were higher than those in the low EPD area. Micro-scale correlation between lineage-like dislocations and I_<ds> distribution was also clearly observed. Implications of these results on the size of a dislocation-influenced area are discussed.
- 社団法人応用物理学会の論文
- 1983-01-20
著者
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ISHIDA Satoru
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Nanishi Yasushi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Nanishi Yasushi
Musashino Electrical Communication Laboratory
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MIYAZAWA Shintaro
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Ishida Satoru
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Miyazawa Shintaro
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Miyazawa Shintaro
Musashino Electrical Communication Laboratory
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- Liquid Phase Epitaxial Growth of n-GaAs on i-GaAs
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