Surface Contamination of GaAs during Photo-Etching

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概要

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• Surface contamination of GaAs due to resist film stripper "J-100" during the photo-etching process is investigated. It is found that the electron concentration near the surface decreases due to the heat treatment after soaking in J-100. The depth of contamination sometimes reaches about 100 μm. Contamination also occurs due to some organic solvents, although the degree of contamination is smaller than that due to J-100. Such contamination can be removed by etching the contaminated surface of GaAs lightly or soaking contaminated samples in a dilute solution of KCN before the heat treatment. Furthermore, the temperature and time dependence of the depth of the contamination are similar to those of the samples soaked in a dilute solution of CuSO_4. It is concluded that contamination originates from Cu atoms contained in these solvents.

• 社団法人応用物理学会の論文
• 1972-12-05

著者

• SATO Yasuo

  Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Uchida Masao

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Sato Yasuo

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Liquid Phase Epitaxial Growth of n-GaAs on i-GaAs
• Surface Contamination of GaAs during Photo-Etching
• Formation of the Conductive Layer near the Surface of Semi-Insulating GaAs Covered with Oxide Film

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