Individual Carrier Traps in GaAs/Al_xGa_<l-x>As Heterostructures (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)

概要

論文の詳細を見る
We study individual carrier traps in a GaAs/Al_xGa_<l-x>As heterostructure by observing random telegraph signals. A narrow channel, which is formed in a split gate device,is shifted by independently controlling the voltage app1ied to each part of the split gate. RTSs can be observed only when the traps are close to the channel and the energy levels of the traps are within a few k_bT of the Fermi level. This type of measurement reveals the locations and the energy distributions of the traps. We also discuss the situation in which two trap levels arc at the Fermi level simultaneously. In this condition the two RTSs do not occur at the same time, but they do interact with each other. This implies that there is an electrostatic interaction between the two trappings.
一般社団法人電子情報通信学会の論文
1996-11-25