酸素プラズマ放電による強磁性トンネル接合の作製

概要

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Cross-geometrical ferromagnetic tunnel junctions with a sspin-valve-like structure of Ni-Fe/Co/Al-AlO/Co/Ni-Fe/Fe-Mn/Ni-Fe wew fabricated by maganetron sputtering using metal masks. The Al layer was oxidized in an atmosphere of oxygen plasma by applying rf low power. The tunnel resistance increased with an increase of the plasma oxidization time. The oxidizing speed was much greater than that achieved by using natural oxidization.An MR ratio of 16% was observed in the as-deposited junction with the barrier oxidized for 35 seconds.By annealing at 300℃ for one hour, the MR ratio increased to 24%.The annealing effect differs according to the plasma oxidization conditions, and we foun that the MR ratios increased by annealing only for the junctions whose Al barrier was oxidezed for under 45 seconds. This suggests that the remaining Al layer plays an important role in the annealing effects.
社団法人日本磁気学会の論文
1998-04-15