リフトオフプロセスによる高周波キャリア型薄膜磁界センサ

概要

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This paper discusses a microfabrication process for high-frequency carrier-type thin-film magnetic field sensors. We fabricated sensor elements by using the lift-off process and the ion milling process, and compared the shape of the sensor edge, the domain structure, and the characteristics of the impedance change in the sensor elements fabricated by the two processes. In the elements fabricated by the lift-off process, the sensor edge is more even than in those fabricated by the ion milling process. Moreover, when the width of the sensor element was 5 μm, its easy axis was induced in a transverse direction, and an impedance change of 14 Ω was achieved. We therefore chose the lift-off process for microfabrication of high-frequency carrier-type thin-film magnetic field sensors.
社団法人日本磁気学会の論文
2001-04-15