アモルファス薄膜における磁壁ピンニングの解析 : 磁性体物理

概要

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Micromagnetic simulation based on the Landau-Lifshitz-Gilbert equation was performed to clarify the effect of self-induced anisotropy on domain wall behavior such as wall broadening and wall pinning. In this simulation, the discretization region was in the cross-section normal to the film plane. Self-induced anisotropy was modeled as follows: first, with the uniform easy axis set normal to the calculation region, the domain wall profile is calculated. Next, after relaxation, with the easy axis direction set to be the same as the magnetization direction, the domain wall profile is re-calculated. A flux-closure asymmetric vortex domain wall (C-shaped) is obtained and the domain wall width increases after the easy axis direction has been set to be the same as the magnetization direction. The increase in the wall width becomes larger with increasing film thickness, which agrees with the experimental results. Positive and negative magnetic fields are applied to estimate the depinning field of the wall. Simulation results show different depinning fields in the direction of the wall movement. The dependences of the depinning field on the film thickness and various wall configurations, such as a two-vortex state (S-shaped), are also presented.
社団法人日本磁気学会の論文
2002-04-01