フルゾーン型フローティング・ゾーン内マランゴニ対流の三次元解析 : バルク結晶成長IV

概要

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A three-dimensional numerical simulation study was carried out to have a better understanding for the role of Marangoni convection in the Floating-zone growth of bulk semiconductor single crystals. In the numerical model, a three dimensional Full-zone (FZ) growth configuration was considered under axisymmetric thermal boundary conditions. Numerical results showed that the flow and temperature fields in the none remained axisymmetric (two-dimensional) in early stages of the simulation. However. as time proceeded, the flow and temperature field patterns became three dimensional. The concentration field exhibited a three-dimensional behaviour even the flow and temperature fields were still axisymmetric. It was also shown that the rotation of the growth system is beneficial in growing axisymetrically uniform crystals .
日本結晶成長学会の論文
2002-07-01