A232 微小重力環境下における FZ 法を用いた Si/Ge 結晶成長に関する数値解析

概要

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In order to have better predictions for the FZ growth of Si/Ge crystal under microgravity field, a numerical simulation of the Marangoni convection in a three-dimensional Full-zone configuration was performed. In early stages of the simulation, the flow and temperature fields were still 2-dimensional, and 2 vortexes with the same size existed in the melt. However, the concentration field exhibited a three-dimensional behaviour even the flow and temperature fields were still axisymmetric. As time proceeds, the flow, temperature and concentration fields become three-dimensional. In the case of large Marangoni number, size of the vortexes periodically changed in spite of assumed axisymmetric thermal boundary conditions. It was shown that rotation of the crystal and feed was beneficial in growing axisymetrically uniform crystals.
一般社団法人日本機械学会の論文
2002-11-06