高周波加熱FZ法によるシリコン単結晶育成時の融液内対流に関する研究

概要

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Flow and temperature distributions in silicon melt during the floating zone (FZ) crystal growth process are investigated numerically and experimentally. The main purpose of the study is to clarify the effect of radio frequency (RF) heating, which is widely used in industry, on the flow and temperature flelds in the melt. On the numerical study, we have made a model of RF heating and calculated not only the experimental situation but also the radiative heating case and compared each other. On the experimental study, we have visualized a flow field by using a RF-FZ furnace with real silicon and a X-ray radiography system. The result reveals that the RF induced convection becomes dominant and the direction is opposite with Marangoni convection. Further, the magnitude of the convection becomes one order high. On the other hand, strong timewise fluctuation of flow and temperature fields are obtained. This fluctuation seems to cause a strong striation in the crystal.
社団法人日本機械学会の論文
1998-05-25