Si 基板上 PZT-PZN 圧電体厚膜の低温形成(<特集>半導体・エレクトロニクス)

概要

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The improvement of piezoelectric thick films formed on Si substrates is required to develop piezoelectric microactuators. In fabricating Pb (Zr, Ti) O_3-Pb (Zn, Nb) O_3 (PZT-PZN) films on Si, it is important to lower the firing temperature of thick films and use buffer layers on Si to prevent the reaction of Si and Pb in the PZT-PZN films. Two kinds of additives, PbO-Ge_2O_3 (PGO) and Bi_2O_3-ZnO, were evaluated to obtain dense films by firing at a low temperature of 850℃. Buffer layers of Al_2O_3/SiO_2 and Al_2O_3/TiO_2/SiO_2 were also evaluated from point of view of densification and electrical properties of the films. The ferroelectric and piezoelectric properties increased as the films became denser, and excellent properties were obtained as follows for films with Bi_2O_3-ZnO additives formed on Pt/Al_2O_3/TiO_2/SiO_2-coated Si : dielectric constant 1350, Curie temperature 300℃, remanent polarization 30.9μC/cm^2 and piezoelectric constant d_<31> 121pm/V.
社団法人日本材料学会の論文
2003-12-15