TiとCを添加したSiC-TiC複合材料の焼結挙動

概要

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SiC-TiC composites with different C/Ti ratio were hot-pressed at 2050℃ for 1h under vacuum. The ratio of C/Ti was controlled by the addition of Ti or C. Density of the sintered bodies decreased with increasing C content. The SiC-TiC composite with a low C/Ti ratio, i.e., doped with 2 mass%Ti, could be densified up to 98% of the theoretical value. On the other hand, relative density of the specimens with higher C/Ti ratio reached only about 80%. Density of the monolithic SiC doped with 2 mass%Ti was measured to be 73%. The presence of free Si and Ti_3SiC_2 phases was confirmed by XRD for the composites with lower C/Ti ratio. Diffraction intensity of these peaks decreased with increasing C content, and finally disappeared. Plastic deformation of TiC and formation of Si and Ti_3SiC_2 phases are believed to be the main factors to control the sintering behavior of SiC-TiC composite containing C deficiency.
1996-07-01