ランタン及びガドリニウムを添加したBaTiO_3単結晶の育成とその電気的性質

概要

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Single crystals of (Ba_<0.96-x>Ln_xSr_<0.04>)TiO_3 (Ln=La, Gd) were grown over a composition range of x=0.001 to 0.03. Electrical resistivities of the single crystals were measured by the DC four-probe method. The temperature dependence of resistivities of these crystals changed from semiconductive to metallic at the Curie temperature (T_C). Although the room temperature resistivities of Gd-doped single crystals were independent of Gd concenration of 1 to 3%, they decreased monotonically with increasing the dopant concentration after annealing in a reducing atmosphere.
社団法人日本セラミックス協会の論文
1996-04-01