窒化ケイ素粉末表面のSiH_x吸収バンドの拡散反射フーリエ変換赤外線分光による解析

概要

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The SiH_x stretching absorbance region (2300-2000 cm^<-1>) of seven different commercial Si_3N_4 powders was investigated by diffused reflectance infrared Fourier transform (DRIFT) spectroscopy. The powders evaluated were produced by three different methods: diimide precipitation, carbothermal reduction and nitridation of silicon using different nitriding media and final treatments. SiH groups were detected in all powders. The results show the presence of H-SiXYZ tetrahedral units. XYZ can be different atoms or groups (Si, H, N, O, NH, NH_2 or OH) that bond to the same silicon atom. The H-Si bands were classified considering the backboned atoms of the H-Si into four main tetrahedral by fixing the XY atoms and several possibilities for Z as follows: silicon-based; H-SiSiSi (Z=Si, NH, H or O), nitride-based; H-SiSiN (Z=NH_2 or O), oxynitride-based; H-SiNO (Z=N, NH or NH_2) and silica-based; H-SiOO (Z=NH_2, OH, O or H) tetrahedral configurations. The proportions of these tetrahedral units are different for each powder. The powder produced by the carbothermal reduction process using N_2 as nitriding media presents the largest fraction of H-Si groups linked to silica-based tetrahedral units. For the other six powders the largest fraction of H-Si groups is linked to silicon-based tetrahedral units.
社団法人日本セラミックス協会の論文
2004-01-01