On the Origin of an Energy Gap in Semiconducting Mixed-Valent Rare-Earth Compounds
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概要
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Results of recent band calculations on SmB., YbB.., Ce,Pt,Sb. and CeNiSn sup-port our previous prediction tlaat the band gap appearing in their non-f referencesystems correlates strongly with the origin of an energy gap in the mixed-valent rare-earth compounds. Based on these results, a more detailed model on the mechanism ofthe appearance of an energy gap is discussed.gap state, valence fluctuation, vt>n..., Ce.Pt.Sb., SmB,
- 社団法人日本物理学会の論文
- 1992-11-15
著者
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KASAYA Mitsuo
Department of Physics,Faculty of Science,Tohoku University
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Kasaya Mitsuo
Department Of Physics Faculty Of Science Tohoku University
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