Metal-Insulator Transition and Charge Fluctuation in the d-p Model
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概要
- 論文の詳細を見る
Electronic states in the d-p model, particularly those around the half-filled case, areinvestigated with the help of the auxiliary boson method and the 1 / 7V-expansion. Thecritical value of the charge transfer energy for a metal-insulator transition to occur atthe half-filled case is evaluated. The analytic expression for the charge susceptibility isgiven. Then characteristics of the charge fluctuation around the transition point areclarified; it is found that the charge susceptibility vanishes on the critical point. Fur-thermore, dependence of the charge susceptibility on the hole number and on thecharge transfer energy is studied. Relevance to high temperature superconductingmaterials is then discussed.
- 社団法人日本物理学会の論文
- 1991-07-15
著者
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ONO Yoshiaki
Department of Physics,Nagoya University
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MATSUURA Tamifusa
Department of Physics,Nagoya University
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Tamifusa Matsuura
Department Of Physics Nagoya University
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Matsuura Tamifusa
Department Of Physics Nagoya University
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Miura K
Department Of Mechanical Systems Faculty Of Computer Science And Systems Engineerig Kyushu Institute
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Miura Kazuo
Department Of Agricultural Chemistry College Of Agriculture University Of Osaka Prefecture
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Yoshiaki Ono
Department Of Physics Nagoya University
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Ono Yoshiaki
Department Of Geriatric Dentistry Osaka Dental University
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Hirashima Dai
Department Of Physics Nagoya University
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JICHU Hisao
Physics Department, Aichi University of Education
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Dai S.
Department of physics, Nagoya University
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Jichu Hisao
Physics,Department,Aichi University of Education
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Hirashima Dai
Department of Material Science, International Christian University, Mitaka, Tokyo 181-8585, Japan
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