Electron-Lattice Interaction and Lattice Dynamics in Black Phosphorus
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概要
- 論文の詳細を見る
The electron-lattice interaction in a narrow gap semiconductor, black phosphorus,is studied microscopically on the basis of tight-binding calcttlations of the electronicband structure. lnterplanar forces along the [1004 direction caused by the electron-Rat-lice interaction are evaluated from the generalized electronic susceptibility calculatedby using the electron-lattice coupling constants. Reflecting the narrow gap, the in-terplanar forces have significant values even for far neighboring planes. Further, considerable decrease of the energy gap induced by pressure gives rise to characteristicpressure dependences of the interplanar forces, which lead To a qualitative explana-lion of the observed pressure dependences of the phonon dispersion curves.
- 社団法人日本物理学会の論文
- 1987-07-15
著者
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Suzuki N
Toyama Univ. Toyama Jpn
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Suzuki Naoshi
Department Of Material Phsics Faculty Of Engineering Science Osaka University
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Aoki Masato
Department Of Physics Faculty Of General Education Gifu University
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Aoki Masato
Department Of Electrical And Electronic Engineering Gifu University
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