光散乱パターンを用いたシリコンウエハ加工表面欠陥のインプロセス計測に関する研究(第2報) : 高速欠陥計測法の提案

概要

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This paper presents a new in-process measurement method for evaluating small defects on a silicon wafer surface by detecting the intensity distribution, "Laser Scattered Defect Pattern (LSDP), " corresponding to the superposition of scattered light from a defect and reflected light from a surface. In order to apply this optical measurement method to in-process measurement, two-stage measurement is proposed. That is, the first stage means "detection of defect positions" and the second stage does "evaluation of defect type". The several basic scanning experiments show that the proposed two-stage measurement method is effective automatic in-process measurement technology for measuring the silicon wafer surface defects with the sub-micro meter scale size at high speed.
公益社団法人精密工学会の論文
2002-07-05