光散乱パターンを用いたシリコンウエハ加工表面欠陥のインプロセス計測に関する研究(第1報) : 微小付着異物の光散乱パターン特性解析

概要

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This paper presents a new optical measurement method for evaluating small defects on a silicon wafer surface by detecting the intensity distribution, "Laser Scattered Defect Pattern(LSDP), " corresponding to the superposition of scattered light from a defect and reflected light from a surface. In order to verify the feasibility of application of this optical measurement method to in-process measurement, the experimental measurements were carried out by identifying the LSDPs with the standard particles on the silicon wafer surface which had been observed by SEM. It was found that this method makes it possible to measure the small defects and contaminations with size of submicron order and has the possibility of discriminating the different kinds of ones.
公益社団法人精密工学会の論文
1999-09-05