Simulated Characteristics of Deep-submicrometer Recessed Channel epi-MOSFETs

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概要

• 論文の詳細を見る

• Characteristics of ultra short channel length recessed channel n-MOSFETs on a P on P^+ epitaxial layer (RC epi-MOSFET) were simulated using the two dimensional device simulator MEDICI. The simulated recessed channel (RC) structure consists of thicker source/drain, zero source/drain junction depth and a lightly doped channel layer. Conventional short channel planar MOSFETs and RC-MOSFETs with uniformly doped substrate were also simulated for performance comparison. High field simulations were carried out using carrier energy balance equations while the single carrier drift-diffusion set of equations was used for low field simulations. Simulation results showed that the RC epi-structure has suppressed threshold voltage roll-off and lower subthreshold swing compared with planar and RC-MOSFETs with uniform substrate doping, without significant reduction in on-state current.

• 九州大学の論文

著者

• KUROKI Yukinori

  Department of Electronic Device Engineering, Kyushu University

• 池田 晃裕

  九州大学大学院システム情報科学研究院

• Perera Rohana

  Department Of Electronics Graduate School Of Information Science And Electrical Engineering Kyushu U

• Kuroki Yukinori

  Department Of Electronic Device Engineering Kyushu University

• Kuroki Yukinori

  Department Of Electronics Faculty Of Information Science And Electrical Engineering Kyushu Universit

• IKEDA Akihiro

  Department of Veterinary Physiology, Veterinary Medical Science, The University of Tokyo

• Ikeda Akihiro

  Department Of Neurosurgery Saitama Medical School Hospital

• Kuroki Y

  Department Of Electronics Faculty Of Information Science And Electrical Engineering Kyushu Universit

• Ikeda Akihiro

  Department of Electronics, Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 812-8581, Japan

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