Depth Profiling of Si Oxidation States in Si-Implanted SiO_2 Films by X-Ray Photoelectron Spectroscopy
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2003-11-15
著者
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Tse M
School Of Electrical And Electronic Engineering Nanyang Technological University
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Liu Yang
School Of Electrical And Electronic Engineering Nanyang Technological University
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Fung S
Department Of Physics The University Of Hong Kong
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FU Yong
School of Mechanical and Production Engineering, Nanyang Technological University
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CHEN Tu
School of Electrical and Electronic Engineering, Nanyang Technological University
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TSE Man
School of Electrical and Electronic Engineering, Nanyang Technological University
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FUNG Steve
Department of Physics, The University of Hong Kong
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HSIEH Jang-Hsing
School of Mechanical and Production Engineering, Nanyang Technological University
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YANG Xiao
School of Electrical and Electronic Engineering, Nanyang Technological University
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Chen Tu
School Of Electrical And Electronic Engineering Nanyang Technological University
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Yang Xiao
School Of Electrical And Electronic Engineering Nanyang Technological University
関連論文
- Depth Profiling of Si Oxidation States in Si-Implanted SiO_2 Films by X-Ray Photoelectron Spectroscopy
- Post-Breakdown Conduction Instability of Ultrathin SiO_2 Films Observed in Ramped-Current and Ramped-Voltage Current-Voltage Measurements
- Power-LaW Dependence of Charge Trapping on Injected Charge in Very Thin SiO_2 Films : Semiconductors
- Influences of Nitridation on Barrier Height Change Caused by Electrical Stress : Semiconductors
- Influence of Nitrogen Proximity from the Si/SiO_2 Interface on Negative Bias Temperature Instability
- Modeling the Post-Breakdown I-V Characteristics of Ultrathin SiO_2 Films With Multiple Snapbacks : Semiconductors
- Design of a Near-Perfect Anti Reflective Layer for Si Photodetectors Based on a SiO2 Film Embedded with Si Nanocrystals
- Calculation of Sputtering Rate during a Plasma-Assisted Process
- Comparison of Two Types of Recessed-Gate Normally-Off AlGaN/GaN Heterostructure Field Effect Transistors
- Parameters and Stability Analysis of Reactive Sputtering
- A novel two-channel time-interleaved second-order ΣΔ modulator
- Depth Profiling of Si Oxidation States in Si-Implanted SiO2 Films by X-Ray Photoelectron Spectroscopy