Modeling the Post-Breakdown I-V Characteristics of Ultrathin SiO_2 Films With Multiple Snapbacks : Semiconductors

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概要

• 論文の詳細を見る

• Multiple conduction states in ultra-thin SiO_2 films after hard breakdown could be observed when the oxides exhibited the behavior of multiple snapbacks. Although the I-V characteristics seem very complicated when the snapbacks occurred with multiple conduction states involved, a careful modeling indicates that each conduction state was well defined. The I-V characteristic of each conduction state can be well modeled by the power law, and a convincing linear dependence is observed for each state when the I-V characteristics are plotted in log -log scale. These findings consist with the percolation model.

• 社団法人応用物理学会の論文
• 2001-07-01

著者

• TSE Man

  School of Electrical and Electronic Engineering, Nanyang Technological University

• FUNG Steve

  Physics Department, The University of Hong Kong

• Tse Man

  School Of Electrical And Electronic Engineering Nanyang Technological University

• Fung Steve

  Physics Department The University Of Hong Kong

• Chen Tupei

  School Of Electrical And Electronic Engineering Nanyang Technological University

関連論文

• Depth Profiling of Si Oxidation States in Si-Implanted SiO_2 Films by X-Ray Photoelectron Spectroscopy
• Post-Breakdown Conduction Instability of Ultrathin SiO_2 Films Observed in Ramped-Current and Ramped-Voltage Current-Voltage Measurements
• Modeling the Post-Breakdown I-V Characteristics of Ultrathin SiO_2 Films With Multiple Snapbacks : Semiconductors
• Depth Profiling of Si Oxidation States in Si-Implanted SiO2 Films by X-Ray Photoelectron Spectroscopy

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