Post-Breakdown Conduction Instability of Ultrathin SiO_2 Films Observed in Ramped-Current and Ramped-Voltage Current-Voltage Measurements
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-05-15
著者
-
Tse M
School Of Electrical And Electronic Engineering Nanyang Technological University
-
Fung S
Department Of Physics The University Of Hong Kong
-
CHEN Tu
School of Electrical and Electronic Engineering, Nanyang Technological University
-
TSE Man
School of Electrical and Electronic Engineering, Nanyang Technological University
-
SUN Chang
School of Electrical and Electronic Engineering, Nanyang Technological University
-
FUNG Steve
Physics Department, The University of Hong Kong
-
Tse Man
School Of Electrical And Electronic Engineering Nanyang Technological University
-
Chen Tu
School Of Electrical And Electronic Engineering Nanyang Technological University
-
Sun Chang
School Of Electrical And Electronic Engineering Nanyang Technological University
-
Fung Steve
Physics Department The University Of Hong Kong
関連論文
- Depth Profiling of Si Oxidation States in Si-Implanted SiO_2 Films by X-Ray Photoelectron Spectroscopy
- Post-Breakdown Conduction Instability of Ultrathin SiO_2 Films Observed in Ramped-Current and Ramped-Voltage Current-Voltage Measurements
- Power-LaW Dependence of Charge Trapping on Injected Charge in Very Thin SiO_2 Films : Semiconductors
- Influences of Nitridation on Barrier Height Change Caused by Electrical Stress : Semiconductors
- Influence of Nitrogen Proximity from the Si/SiO_2 Interface on Negative Bias Temperature Instability
- Modeling the Post-Breakdown I-V Characteristics of Ultrathin SiO_2 Films With Multiple Snapbacks : Semiconductors
- Design of a Near-Perfect Anti Reflective Layer for Si Photodetectors Based on a SiO2 Film Embedded with Si Nanocrystals
- Wireless Energy Transmission to Piezoelectric Components
- Depth Profiling of Si Oxidation States in Si-Implanted SiO2 Films by X-Ray Photoelectron Spectroscopy